石英坩埚表面涂层对铸造多晶硅生长中杂质传输的影响  

Effect of Crucible Surface Coating on Transport of As-grown Impurity in Multicrystalline Silicon

作　　者：季尚司[1] 左然[1] 苏文佳[1] 韩江山[1] 

机构地区：[1]江苏大学能源与动力工程学院,镇江212013

出　　处：《人工晶体学报》2013年第10期2177-2182,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金青年基金(51206069);江苏省自然基金青年基金(BK2012295)

摘　　要：铸锭中过高的杂质浓度是影响铸造多晶硅太阳电池效率的主要因素之一。本文通过数值模拟的手段研究了不同的表面涂层厚度和涂层渗透率对生长过程中O,C杂质的影响,研究表明涂层厚度能够很明显的降低晶体中O,C的含量。同时涂层的渗透系数越小,O,C杂质在晶体中的分布含量越低。High impurity concentration in the ingot casting is one of the main factors that have influence on poly-silieon solar cell efficiency. The coating thickness and permeability effect on the oxygen and carbon transport in casting process was studied by numerical simulation. The results were large coating thickness and small permeability can reduce the oxygen and carbon in the crystal.

关 键 词：铸造多晶硅 杂质传输 Si3 N4涂层 数值模拟 

分 类 号：O731[理学—晶体学]