High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared  

作　　者：Zhe Liu Tao Luo Bo Liang Gui Chen Gang Yu Xuming Xie Di Chen Guozhen Shen 

机构地区：[1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China [2]Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China

出　　处：《Nano Research》2013年第11期775-783,共9页纳米研究（英文版）

基　　金：Acknowledgements This work was supported by the National Natural Science Foundation （Nos. 91123008, 51002059, 21001046）, the 973 Program of China （No. 2011CB933300）, and the Program for New Century Excellent Talents of the Universities in China （grant No. NCET-11-0179）. We thank the Analytical and Testing Center of Huazhong University of Science and Technology for measurements.

摘　　要：InAs is a direct, narrow band gap （0.354 eV） material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 × 103 AW , 1.03 × 106%, and 2.6 × 1011 Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse. Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse.InAs 是直接、狭窄的乐队差距(0.354 eV ) 材料与超离频电子活动性，并且潜在地在宽 UV-visible-near-infrared 区域的一个好 optoelectronic 设备候选人。在这个工作，我们报导 InAs 基于 nanowire 的光电探测器的制造，它在一个女人上显示出很高的 photoresponse 光谱从 300 ～ 1,100 nm 的范围。responsivity，外部量效率和设备的 detectivity 分别地被测量是有用在一台原子力量显微镜(AFM ) 之间产生的高静电的地的 nanoscopic 精确的 4.4 张 y 还原剂 graphene 氟化物(GF ) 表尖端和 GF 底层。由电场的氟的符号的减小急速地与表抵抗力与 105-1,800 nm 的宽度生产 graphene nanoribbons (GNR ) 减少了从 > 1 T ???????? ? ?

关 键 词：InAs nanowire photodetector broad spectra detection UV-visible-NIR 

分 类 号：TN215[电子电信—物理电子学] TN311.7