新型SiC功率器件在Boost电路中的应用分析  

Application of New SiC Power Devices for Boost Circuit

作　　者：王旸文[1] 赵彪[2] 严干贵[1] 宋强[2] 

机构地区：[1]东北电力大学,吉林吉林132000 [2]清华大学,北京100084

出　　处：《电力电子技术》2013年第11期106-108,共3页Power Electronics

基　　金：国家自然科学基金(51077076);国家863高技术基金项目(2013AA050104)~~

摘　　要：分析新型SiC功率器件在实际应用中的基本特性,以升压斩波电路为载体,通过理论分析对SiC MOSFET栅极电阻对开关特性的影响,以及开关频率与传输效率的关系进行了阐述。同时,以SiC MOSFET功率器件为核心搭建了实验样机,依据实测数据对理论分析进行验证,并与同类型Si器件相互比较,得出了关于SiC功率器件在系统电路设计方面的优点和一些值得注意的问题。This paper focuses on the basic characterization of new SiC power devices in practical application.With the Boost chopper as a carrier, theoretical analysis with the effects of SiC MOSFET gate resistance on switching character- istics,and the relationship between switching frequency and transmission efficiency are given.On this basis,experi- mental prototype is set up based on SiC MOSFET power device.The experimental results verify the validity of the the- oretical analysis, and compared with the same specification of Si device, some design advantages and considerations for the system implement are presented.

关 键 词：功率器件 升压斩波电路 栅极电阻 

分 类 号：TN3[电子电信—物理电子学]