Experimental Determination of the ICRF Power Depositing on the Electrons in HT-7  

作　　者：布景亮 刘永 张新军 提昂 张寿彪 张涛 韩翔 王嵎民 凌必利 高翔 

机构地区：[1]Institute of Plasma Physics, Chinese Academy of Sciences

出　　处：《Plasma Science and Technology》2013年第11期1100-1102,共3页等离子体科学和技术（英文版）

基　　金：supported by the National Magnetic Confinement Fusion Science Program of China(Nos.2011GB107000,2011GB107003);partly supported by the JSPS-NRF-NSFC A3 Foresight Program in the field of Plasma Physics(NSFC No.11261140328);National Natural Science Foundation of China(Nos.11105179,11021565,11275234)

摘　　要：This paper reports for the first time an experimental study on the power deposition profile of the ion cyclotron range frequencies （ICRF） power depositing on electrons in HT-7. The fast Fourier transform （FFT） analysis and the break in slope （BIS） method are utilized to obtain the information of the power deposition. The results indicate that the electrons were heated directly, and the electrons absorbed around 20% of the input power of the discharge of interest.This paper reports for the first time an experimental study on the power deposition profile of the ion cyclotron range frequencies （ICRF） power depositing on electrons in HT-7. The fast Fourier transform （FFT） analysis and the break in slope （BIS） method are utilized to obtain the information of the power deposition. The results indicate that the electrons were heated directly, and the electrons absorbed around 20% of the input power of the discharge of interest.

关 键 词：ICRF power modulation BIS 

分 类 号：TL631.24[核科学技术—核技术及应用] TK16[动力工程及工程热物理—热能工程]