用于铁电BaTiO_3薄膜的Ta_2O_5隔离埋层(英文)  

Embedded Ta_2O_5 Isolation for Ferroelectric BaTiO_3 Films

作　　者：张安邦[1,2] 祁小四[2] 邓朝勇[1,2] 

机构地区：[1]贵州大学电子信息学院,贵阳550025 [2]贵州大学贵州省电子功能复合材料特色重点实验室,贵阳550025

出　　处：《微纳电子技术》2013年第11期701-704,709,共5页Micronanoelectronic Technology

基　　金：Science Research Plan of Guizhou Province of China(2012-3005,2010-4005,2009-15,2010-2134,2011-2016);Fundamental Research Fund for the Guiyang City(2012101-2-4);Graduates' Innovation Fund of Guizhou University(2013021)

摘　　要：BaTiO3薄膜的铁电性通常会受到界面效应的影响而衰减。提出了使用Ta2O5作为隔离层能够有效抑制界面效应。利用脉冲激光沉积技术,在(100)晶向的SrTiO3衬底上成功制备了BaTiO3/Ta2O5/SrRuO3三层复合薄膜结构。样品的XRD结果表明所得到的薄膜为四角结构的BaTiO3,样品的三层膜结构能够在场发射扫描电镜(FESEM)中清楚观察到。实验所测的电滞回线表明该三层BaTiO3/Ta2O5/SrRuO3薄膜的饱和极化强度、剩余极化强度和矫顽电压分别是58.7μC/cm2,20.6μC/cm2,20.3 V。与两层的BaTiO3/SrRuO3薄膜相比,该BaTiO3/Ta2O5/SrRuO3三层复合薄膜能够表现出更加优异的铁电性。因而,提供了一个能使BaTiO3薄膜的集成变得简单可行的方法,并且可以用作提升相关铁电器件的性能。The ferroelectric property of BaTiO3 thin films is usually reduced by the interracial effects. An effective method to deal with the interfacial effects was proposed by using Ta2O5 as the isolation layer. The BaTiO3/Ta2O5/SrRuO3 trilayered structure was successfully fabricated on （100） -SrTiO3 substrates by the pulsed laser deposition technique. The XRD result indicates the obtained film is tetragonal structure of BaTiO3 and the trilayered structure of BaTiO3/Ta2O5/ SrRuO3 can be observed clearly by field emission scanning electron microscop （FESEM）. The measured electric hysteresis loops show that the saturation polarization, remnant polarization and coercive voltage of the BaTiO3/Ta2O5/SrRuO3 films are 58.7μC/cm2 , 20.6 μC/cm2 and 20.3 V, respectively. Compared with the BaTiO3/SrRuO3 two-layer, the BaTiO3/Ta2O5/SrRuO3 trilayers exhibits the better ferroelectrie performance. Therefore, this work provides a practical route to facilitate the integration of BaTiO3 films and improve the performance of relative ferroeleetric devices.

关 键 词：铁电陶瓷 电介质 多层薄膜 铁电性 界面效应 

分 类 号：TN304.9[电子电信—物理电子学]