Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD  

作　　者：Liang Xu Di Jiang Yi-Feng Fu Stephane Xavier Shailendra Bansropun Afshin Ziaei Shan-Tung Tu Johan Liu 

机构地区：[1]Division of Process Equipment Science and Engineering,School of Mechanical and Power Enigneering,East China University of Science and Technology [2]BioNano Systems Laboratory,Department of Microtechnology and Nanoscience(MC2),Chalmers University of Technology [3]SHT Smart High Tech AB [4]Thales Research and Technology [5]Key Laboratory of New Displays and System Integration,SMIT Center,and School of Mechatronics and Mechanical Engineering,Shanghai University

出　　处：《Advances in Manufacturing》2013年第3期236-240,共5页先进制造进展（英文版）

基　　金：supported by EU programs "Nanotec","Mercure","Nanocom","Nano-RF" and "Nanotherm", the SSF program"Scalable Nanomaterials and Solution Processable Thermoelectric Generators", and also Contract No.EM11-0002;a part of the Sustainable Production Initiative and the Production Area of Advance at Chalmers;supported by the Shanghai Science and Technology Program(Grant No.12JC1403900) and NSFC(Grant No.51272153)

摘　　要：Due to their unique thermal, electronic and mechanical properties, carbon nanotubes （CNTs） have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition （PECVD） has been extensively developed as one growth technique to produce verticallyaligned car bon nanotubes （VACNTs）. Though CNTs show a trend to be integrated into nanoelectromechanical system （NEMS）, CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and un derlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and byincreasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT den sity by changing the thickness of Cu underlayer.Due to their unique thermal, electronic and mechanical properties, carbon nanotubes （CNTs） have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition （PECVD） has been extensively developed as one growth technique to produce verticallyaligned car bon nanotubes （VACNTs）. Though CNTs show a trend to be integrated into nanoelectromechanical system （NEMS）, CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and un derlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and byincreasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT den sity by changing the thickness of Cu underlayer.

关 键 词：Carbon nanotube （CNT） - Substrate Underlayer Effect 

分 类 号：O613.71[理学—无机化学] TB383.1[理学—化学]