电极界面修饰对PLEDs器件性能的影响  

The Impact of Electrode Interface Modification on the Properties of PLEDs

作　　者：陈云[1] 顾菊芬[1] 解令海[1] 彭波[1] 韦玮[2] 

机构地区：[1]南京邮电大学信息材料与纳米技术研究院,江苏南京210023 [2]南京邮电大学光电工程学院,江苏南京210023

出　　处：《南京邮电大学学报（自然科学版）》2013年第5期28-32,共5页Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition

摘　　要：为了研究阴阳极界面修饰对聚合物电致发光器件(PLEDs)性能的影响,文中以ITO/MEH-PPV/Al为原型器件,研究了氧化石墨烯(GO)或者氟化铯(CsF)阴极界面修饰,GO或者PEDOT∶PSS阳极界面修饰对器件性能改善的影响。结果显示:CsF在修饰阴极界面时起到了主导性作用,使得PLEDs的发光亮度显著提高,而GO在修饰阴极界面时却没有这样的效果;但实验发现,GO有望成为新一代的阳极界面修饰材料,替代PEDOT∶PSS修饰ITO阳极。In order to study the impact of cathode or anode interface modification on the properties of polymer light-emitting diodes （PLEDs）,we study the effect of graphene oxide （GO） or cesium fluoride （CsF） cathode interface modification and GO or PEDOT：PSS anode interface modification on the performance depending on the PLED of the ITO/MEH-PPV/Al structure.The results show that CsF plays a key role in cathode interface modification to greatly improve the brightness of PLEDs,and the brightness of PLEDs added GO cathode interface modification has little effect.The experiment result shows that GO is expected to become a new kind of anode interfacial modification materials and takes the place of PEDOT：PSS to modify ITO.

关 键 词：聚合物电致发光器件(PLEDs) 电流-电压-发光亮度(J-V-B)特性 阴阳极界面修饰 

分 类 号：TN873.3[电子电信—信息与通信工程]