Continuous wafer-scale graphene on cubic-SiC（O01）  

作　　者：Alexander N. Chaika Olga V. Molodtsova Alexei A. Zakharov Dmitry Marchenko Jaime Sanchez-Barrig Andrei Varykhalov Igor V. Shvets Victor Yu. Aristov 

机构地区：[1]Institute of Solid State Physics RAS, Chemogolovka, Moscow District 142432, Russia [2]Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College, Dublin 2, Ireland [3]HASYLAB at DESY, D-22607 Hamburg, Germany [4]MAX-lab, Lund University, Box 118, 22100 Lund, Sweden [5]Helmholtz-Zentrum Berlin für Materialien und Energie, D- 12489 Berlin, Germany

出　　处：《Nano Research》2013年第8期562-570,共9页纳米研究（英文版）

摘　　要：The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC（001）/Si（001） wafers have been studied by low energy electron microscopy （LEEM）, scanning tunneling microscopy （STM）, low energy electron diffraction （LEED）, and angle resolved photoelectron spectroscopy （ARPES）. LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SIC（001）. LEEM, STM and ARPES studies reveal that the graphene overlayer on SIC（001） consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometer-sized domains with four different lattice orientations connected through the 〈110〉-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC（001）/Si（001） wafers for graphene fabrication repre-sents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.

关 键 词：GRAPHENE cubic-SiC（001） STM ARPES LEEM LEED 

分 类 号：O485[理学—固体物理] TG745[理学—物理]