Cotunneling transport in ultra-narrow gold nanowire bundles  

作　　者：Anais Loubat Walter Escoffier Lise-Marie Lacroix Guillaume Viau Reasmey Tan Julian Carrey Benedicte Warot-Fonrose Bertrand Raquet 

机构地区：[1]Laboratoire National des Champs Magnetiques Intenses, CNRS-INSA-UJF-UPS, UPR3228 143 avenue de Rangueil, F-31400 Toulouse,France [2]Universite de Toulouse, INSA, UPS, LPCNO (Laboratoire de Physique et Chimie des Nano-Objets), F-31077 Toulouse, France CNRS UMR5215 LPCNO, F-31077 Toulouse, France [3]Centre d'Elaboration de Materiaux et d'Etudes Structurales, CNRS, 29 rue Jeanne Marvig, F-31077 Toulouse, France

出　　处：《Nano Research》2013年第9期644-651,共8页纳米研究（英文版）

摘　　要：We investigate the charge transport in close-packed ultra-narrow （1.5 nm diameter） gold nanowires stabilized by oleylamine ligands. We give evidence of charging effects in the weakly coupled one-dimensional （1D） nanowires, monitored by the temperature and the bias voltage. At low temperature, in the Coulomb blockade regime, the current flow reveals an original cooperative multi-hopping process between 1D-segments of Au-NWs, minimising the charging energy cost. Above the Coulomb blockade threshold voltage and at high temperature, the charge transport evolves into a sequential tunneling regime between the nearest- nanowires. Our analysis shows that the effective length of the Au-NWs inside the bundle is similar to the 1D localisation length of the electronic wave function （of the order of 120 nm _＋ 20 nm）, but almost two orders of magnitude larger than the diameter of the nanowire. This result confirms the high structural quality of the Au-NW segments.我们调查费用运输在拥挤不堪极端狭窄(1.5 nm 直径) 金 nanowires 由 oleylamine ligands 稳定了。我们给控告效果在的证据微弱地联合了一个维(1D ) nanowires，由温度和偏爱电压监视了。在低温度，在库仑封锁政体，当前的流动揭示在 Au-NWs 的 1D 片断之间的一个原来的合作多跳跃的过程，最小化收费精力费用。在库仑封锁阀值电压上面并且在高温度，费用运输演变为在 nearestnanowires 之间的顺序的通道政体。我们在捆内的 Au-NWs 的有效长度类似于电子波浪的 1D 本地化长度的分析表演工作(120 nm 的顺序吗？？

关 键 词：ultra-narrow goldnanowires 1D nano-objects electronic transport variable cotunneling Coulomb blockade 

分 类 号：TN32[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]