Clean transfer of graphene on Pt foils mediated by a carbon monoxide intercalation process  

作　　者：Donglin Ma Yanfeng Zhang Mengxi Liu Qingqing Ji Teng Gao Yu Zhang Zhongfan Liu 

机构地区：[1]Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China [2]Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China

出　　处：《Nano Research》2013年第9期671-678,共8页纳米研究（英文版）

基　　金：Acknowledgements This work was financially supported by the Ministry of Science and Technology of China （Grant Nos. 2011CB921903, 2012CB921404, 2012CB933404, 2013CB932603, and 2011CB933003）, and the National Natural Science Foundation of China （Grant Nos. 21073003, 51222201, 51290272, 51121091, and 51072004）.

摘　　要：Noble metals such as Pt are a perfect substrate for the catalytic growth of monolayer graphene. However, the requirements of the subsequent transfer process are not compatible with the traditional etching method. In this work, we find that the interaction of graphene with Pt foil can be weakened through the intercalation of carbon monoxide （CO） under ambient pressure. This intercalation process occurs on both hexagonal-shape graphene islands and irregular graphene patches on changing the CO partial pressure from 0 to 0.6 MPa, as observed by scanning electron microscopy （SEM）, Raman spectroscopy and X-ray photoemission spectroscopy. We demonstrate that, on a practical timescale, the intercalation ratio is proportional to the partial pressure of CO. Furthermore, we develop a clean transfer method of CO-intercalated graphene with water as a peeling agent. We show that this method enables the transfer of tens of micrometer-scale graphene patches onto SiO2/Si, which are free from metal or oxide particle contamination. This transfer method should be a significant step towards the dean transfer of graphene, as well as the recydable use of noble metal substrates.象磅那样的高贵金属是为单层 graphene 的催化生长的完美的底层。然而，随后的转移过程的要求不与传统的蚀刻方法兼容。在这个工作，我们发现有磅陪衬的 graphene 的相互作用能在周围的压力下面通过碳一氧化物(公司) 的置闰被削弱。这个置闰过程在从 0 ～ 0.6 MPa 改变 CO 部分压力上发生在两个六角形形状的 graphene 岛和不规则的 graphene 补丁上，作为由扫描电子显微镜学(SEM ) 观察了，拉曼光谱学和 X 光检查光致核裂变光谱学。我们证明在实际 timescale 上，置闰比率而且与公司的部分压力成正比，我们作为一个脱皮的代理人与水开发共同设置的 graphene 的一个干净转移方法。我们证明这个方法启用十个测微计规模 graphene 补丁的转移到 SiO2/Si 上，它从金属或氧化物粒子污染是免费的。这个转移方法应该是向 graphene，以及高贵金属底层的 recyclable 使用的干净转移的重要的步。

关 键 词：graphene transfer CLEAN etching free CO intercalation Pt foils 

分 类 号：TQ127.11[化学工程—无机化工] O643.36[理学—物理化学]