金属Au纳米膜的电子输运及非线性效应  

Electron transport in nanostructured gold films and nonlinear electrical conductivity characteristics

作　　者：殷子文[1] 刘翠君[1] 李建宽[1] 丁玉保 孟庆云[1] 

机构地区：[1]北京化工大学理学院,北京100029

出　　处：《北京化工大学学报（自然科学版）》2013年第6期117-122,共6页Journal of Beijing University of Chemical Technology(Natural Science Edition)

摘　　要：使用Matlab软件对N方势垒在偏压下电流随电压的变化关系进行了模拟计算,计算结果表明N方势垒的伏安特性(I-V)曲线上显现出非线性效应和震荡效应。利用溅射方法将Au颗粒沉积在经过电化学腐蚀处理的硅基片上,得到具有纳米结构的Au膜。采用SEM对基片表面上的金膜进行观察,发现了纳米颗粒的聚集体,样品的I-V曲线测试结果表明:常温下,测得电流在0至1.5×10-6A范围内,样品电阻率呈非线性电阻效应和振荡效应;N方势垒模型的模拟计算结果与实验测量结果很好的吻合。Scattering of free particles by a one dimensional multi-barrier has been investigated, and the relationship between the current and voltage of the muhi-barrier was calculated using Matlab software. The calculation results indicate that the volt-ampere curve possessed oscillation phenomena and nonlinear characteristics. We also discuss the influence of different structures of N-barrier systems on the volt-ampere graph. A silicon substrate was prepared using an etched silicon wafer. The etchant was a mixed solution of HF and ethanol. Films of different thickness were produced on silicon substrates by sputter deposition. The sample surface morphology was observed by field emission scanning electron microscopy （SEM）. The results showed that the films were composed of discontinuous metal particles. The I - V characteristics curves were nonlinear and started to oscillate at a certain voltage. Excel- lent agreement between experimental data and model calculations was found.

关 键 词：纳米结构Au膜 多重方势垒 数值模拟 振荡效应 电子输运 

分 类 号：O484.3[理学—固体物理]