YF_3掺杂钛酸钡半导体材料特性研究  

Study on PTCR Property of Atmospherically Sintered YF_3-doped Barium Titanate

作　　者：黄传勇[1] 唐子龙[1] 张中太[1] 张枫[1] 林元华[1] 朱鹏翔 

机构地区：[1]清华大学材料科学与工程系,北京100084

出　　处：《功能材料》2000年第6期615-616,共2页Journal of Functional Materials

摘　　要：在不同气氛下制备了YF3掺杂钛酸钡材料,并对其电阻的正温度系数特性进行了研究。借助于XRD、SEM、XRF、阻温特性测试仪和阻抗分析仪,研究了不同处理气氛对YF3掺杂钛酸钡材料结构和性能的影响。研究结果表明,在空气和在氩气中烧结的YF3掺杂钛酸钡材料都是N型半导体,其中Y取代A位,F取代O位,并对在氩气气氛中烧结的YF3掺杂钛酸钡材料还观察到了不同的PTCR效应。这种PTCR效应的产生可能是由于存在新的取代机制──O位取代的半导化机制引起的。Barium titanate (BaTiO3) based ceramics wh ich exhibit positive temperature coefficient of resistivity (PTCR) effec t were doped by yttrium fluoride (YF3) under different atmosphere.The effects of different sintering atmosphere on the structure and proper ty of YF3-doped BaTiO3 ceramics were investigated by the aids of XRD,SEM,R-T measuring instrument and impedance analysis. The experiment s show that YF3-doped BaTiO3 ceramics fired in both air and Ar a re n-type semiconductor, in which Y substitutes A-site, and F substitu tes O-site. An anomalous PTCR effect was observed when YF3-doped Ba TiO3 ceramics was fired in Ar atmosphere. This phenomenon may be cau sed by a new substitution mechanism-O site substitution.

关 键 词：钛酸钡 氟化钇 掺杂 PTCR效应 半导体 

分 类 号：TN304.82[电子电信—物理电子学]