半导体激光器高反膜系参数的模拟仿真分析  

A Simulation Study on the Design Parameters of High-Reflection Coating for Semiconductor Laser

作　　者：马钰慧[1] 邱伟彬[1] 苏道军[1] 王加贤[1] 崔碧峰[2] 王晓玲[2] 

机构地区：[1]华侨大学信息科学与工程学院,福建厦门361021 [2]北京工业大学北京市重点光电实验室,北京100022

出　　处：《华侨大学学报（自然科学版）》2013年第6期636-639,共4页Journal of Huaqiao University(Natural Science)

基　　金：福建省自然科学基金资助项目(2012J0127);华侨大学高层次引进人才科研启动项目(11Y0299)

摘　　要：分析制备半导体激光器高反膜系中出现的中心波位置偏移和峰值偏移现象,利用TFCalc软件对实验参数进行模拟仿真,得到中心波位置和峰值与膜厚偏差、膜料折射率变化的具体关系.研究结果表明:膜厚变化只能影响中心波的偏移,而不能影响峰值的大小,膜厚增大则中心波红移,膜厚减小则中心波蓝移;折射率变化会影响中心波位置和峰值的大小两个值,但折射率偏差3%已经是较大值,故折射率偏差对中心波位置的影响不会太大.Problems of center wavelength position shift and peak reflectance variation appeared in high-reflection coating fabrication of semiconductor laser were analyzed and investigated in this paper. Experiment parameters were simulated by using TFCalc software, and the definite relationship between centre wavelength position, the peak reflectance and film thickness error, coating material index change was obtained. The simulation results showed that the film thickness errors influenced the wavelength position rather than the peak reflectance. Increasing film thickness causes the center wavelength red shift, while decreasing film thickness induced the center wavelength blue shift; Index modification of the coating ma- terials affects both the center position and the peak reflectance. Effect of center wavelength position from coating materi- als index modification in not significant even the index modification is as high as 3%.

关 键 词：半导体激光器 中心波 偏移 高反射膜 镀膜 

分 类 号：TU360.2[建筑科学—结构工程]