新型多有源区隧道再生光耦合大功率半导体激光器  

NOVEL COUPLED MULTI-ACTIVE REGION HIGH POWER SEMICONDUCTOR LASERS CASCADED VIA TUNNEL JUNCTION

作　　者：廉鹏[1] 殷涛 高国[1] 邹德恕[1] 陈昌华 李建军 沈光地[1] 马骁宇[2] 陈良惠[2] 

机构地区：[1]北京工业大学电子工程系和北京市光电子技术实验室,北京100022 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2000年第12期2374-2377,共4页Acta Physica Sinica

基　　金：国家自然科学基金!(批准号 :6 9776 0 33);北京自然科学基金!(批准号 :496 10 0 1)资助的课题&&

摘　　要：针对大功率半导体激光器面临的主要困难 ,提出并实现了一种隧道再生多有源区耦合大光腔高效大功率半导体激光器机理 .该机理能有效地解决光功率密度过高引起的端面灾变性毁坏、热烧毁和光束质量差等大功率激光器存在的主要问题 .采用低压金属有机化合物气相淀积方法生长了以碳和硅作为掺杂剂的GaAs隧道结、GaAs/In GaAs应变量子阱有源区和新型多有源区半导体激光器外延结构 ,并制备了高性能大功率 980nm激光器件 .三有源区激光器外微分量子效率达 2 .2 ,2A驱动电流下单面未镀膜激光输出功率高达 2 .5W .A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5?W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

关 键 词：半导体激光器 大功率 多有源区隧道再生激光器件 

分 类 号：TN248[电子电信—物理电子学]