多孔硅场致电子发射  

Field Emission of Porous Silicon

作　　者：丁邦建[1] 王维彪[2] 

机构地区：[1]镇江高等专科学校,江苏镇江212003 [2]中国科学院长春光学精密机械与物理研究所,吉林长春130021

出　　处：《液晶与显示》2000年第4期268-272,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金资助! ( 56972 0 34 )

摘　　要：研究了多孔硅冷阴极的场致电子发射特性 ,实验表明采用电化学阳极腐蚀、氧化、蒸电极等工艺可以制备一种平面薄膜型多孔硅冷阴极。The field emission performances of porous silicon were studied. Porous silicon was fabricated by anodization technology. Cold cathode of porous silicon was fabricated by oxidization and deposited with nano Au thin film. The results show that porous silicon cold cathode has better field emission performances and can be used in field emission display technology.

关 键 词：多孔硅 冷阴极 场致电子发射 多孔硅场发射器件 

分 类 号：TN383.1[电子电信—物理电子学]