阳极氧化条件对多孔硅冷阴极场发射特性的影响  

Effect of Anodized Conditions on Field Emission of Porous Silicon Cold Cathode

作　　者：丁邦建[1] 王维彪[2] 

机构地区：[1]镇江高等专科学校,江苏镇江212003 [2]中国科学院长春光学精密机械与物理研究所,吉林长春130021

出　　处：《液晶与显示》2000年第4期273-277,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金资助! ( 56972 0 34 )

摘　　要：研究了多孔硅的制备条件对多孔硅冷阴极场发射特性的影响 ,实验表明多孔硅的制备条件如电解电流密度、电解时间等对多孔硅冷阴极的场发射特性有较大的影响。The effecf of anodization conditions of silicon on the field emission performances of porous silicon cold cathode were studied. Porous silicon was fabricated by anodization technology. Porous silicon cold cathode was fabricated by oxidization and deposited nano-Au thin film. The results show that anodized conditions of silicon such as anodized current density and anodized time have greater effect on field emission threshold voltage and emission effciency of porous silicon cold cathode.

关 键 词：阳极氧化 场发射 多孔硅冷阴极 

分 类 号：TN383.1[电子电信—物理电子学]