非晶硒对X射线光电转换特性的研究  

PHOTOELECTRIC CONVERSION PROPERTIES OF AMORPHOUS SELENIUM TO X-RAYS

作　　者：徐向晏[1] 牛憨笨[1] 阔晓梅[1] 王云程[1] 

机构地区：[1]中国科学院西安光学精密机械研究所,光电子部西安710068

出　　处：《光子学报》2000年第11期1028-1034,共7页Acta Photonica Sinica

摘　　要：非晶硒 X射线光电导具有很高的固有空间分辨率 ,有可能研制探测 X射线成象的平板化数字器件 ,在探测 X射线成象方面倍受注目 .它对 X射线的光电转换特性和灵敏度是重要的性能参数之一 .我们制作了约 40 0μm厚的非晶硒膜 ,在 1～ 1 2 .5 V/μm场强范围 ,0 .2～1 2 m R/s照射率范围测量了 X射线光电流值 .实验结果显示 ,非晶硒具有线性的光电转换特性 ,其灵敏度随场强的增加而增加 .计算表明 ,对于医疗诊断常用的轫致辐射 X射线谱 ,用 X射线在非晶硒中产生一电子 -空穴对所需的能量 W± 约 5 0 e V(1 0 V/μm场强 )Amorphous selenium (α Se) is becoming most promising X ray imaging receptor material due to its high inherent spatial resolution and the capable of solid state digital detector.The photoelectric conversion properties and sensitivity of α Se to X rays is important for such receptor.About 400μm α Se layer has been deposited,with α Se layer sandwiched between two electrodes,X ray photocurrent is measured in exposure rate ranging from 0.2mR/s to 12mR/s,electric field (F) ranging from 1V/μm to 12.5V/μm.The results show that α Se has linear photoelectric conversion properties,and its sensitivity depends on electric field (F).Our calculation indicates that W ±,the energy needed to release an electron hole pair,is about 50eV at 10V/μm electric field for X ray commonly used in medical fluorscopy.

关 键 词：非晶硒 光电导 光电转换特性 X射线成象 

分 类 号：O434.1[机械工程—光学工程] O472[理学—光学]