基于氧等离子体活化的硅硅直接键合工艺研究  

Research on Silicon Direct Bonding Using Oxygen Plasma Treatment

作　　者：张昆[1] 廖广兰[1] 史铁林[1] 聂磊[2] 

机构地区：[1]华中科技大学数字制造装备与技术国家重点实验室,武汉430074 [2]湖北工业大学机械工程学院,武汉430068

出　　处：《半导体光电》2013年第5期783-786,共4页Semiconductor Optoelectronics

基　　金：国家"973"计划项目(2009CB724204)

摘　　要：基于氧等离子体活化的硅硅直接键合是一种新型的低温直接键合技术。为了优化工艺参数,得到高质量的键合硅片,选用正交试验法,研究了氧等离子体活化时间、活化功率、氧气流量三个重要的工艺参数对键合的影响,并采用键合率评估键合质量。研究结果表明,活化功率对键合率的影响最大,氧气流量次之,活化时间对结果影响最小,据此结论,在上述工艺中需重点关注活化功率和氧气流量的参数选择。Silicon wafer direct bonding using oxygen plasma treatment is a novel low temperature silicon direct bonding technology. To optimize the process and obtain high quality bonding wafers, orthogonal experiments were performed to investigate the influences of three principal processing parameters, namely activation time of oxygen plasma, activated power and oxygen flow on wafer bonding, and the ratio of bonded area to total silicon area was used to evaluate the bonding quality. The results prove that the activated power affects the bonding ratio most, the oxygen flow takes the second place, and the acti,,ated time affects the bonding ratio least. Thus, it is needed to pay more attention on the activated power and oxygen flow in the process.

关 键 词：氧等离子体 硅硅直接键合 正交试验 

分 类 号：TN304.2[电子电信—物理电子学]