用于光子晶体的多孔硅制备条件研究  

Research on Porous Silicon Preparation for Photonic Crystals

作　　者：莫瑞海 刘洪利[1] 张轩雄[1,2] 

机构地区：[1]上海理工大学光电信息与计算机工程学院上海市现代光学系统重点实验室,上海200093 [2]中国科学院微电子研究所,北京100029

出　　处：《半导体光电》2013年第5期811-814,共4页Semiconductor Optoelectronics

摘　　要：利用扫描电镜观察了不同电压强度、腐蚀液浓度条件下制备的用于二维光子晶体的多孔硅的微观形貌。研究表明在恒压供电模式下更有利于硅基二维光子晶体的制备;随着腐蚀电压强度的增长,孔径和孔深都呈现增长的趋势,增长的幅度逐渐减小,腐蚀效率比的增长幅度也有逐渐变小的趋势;随着腐蚀溶液浓度的减小,腐蚀速率在降低,但腐蚀效率比在增大,虽然多孔硅的生长速度变慢,但是多孔硅的质量更好。Porous silicon （PS） for 2D photonic cryst, 1 was prepared by electrochemical method under different voltage strengths and electrolyte concentrations, and then its microstructure was observed by scanning electron microscope. Studies show that the stable space charge region under constant-voltage condition is more beneficial for the fabrication of 2D photonic crystals. The pore diameter and pore depth have an increasing trend with the increasing erosion voltage intensity and the growth rate is gradually decreased, as well as the growth rate of efficiency ratio of corrosion. With the decrease of concentration of etching solution, the corrosion rate decreases, but the efficiency ratio of corrosion increase,. Although the growth rate of PS decreases, but the growth quality is better.

关 键 词：多孔硅 电化学腐蚀 腐蚀效率比 

分 类 号：TN304[电子电信—物理电子学]