无压烧结制备Ti_3SiC_2-金刚石复合材料的反应机理与微观结构  

Reaction mechanisms and microstructure of Ti_3SiC_2-diamond composites synthesized by pressureless sintering

作　　者：李正阳[1] 周爱国[1] 李良[1] 王李波[1] 

机构地区：[1]河南理工大学材料科学与工程学院,河南焦作454000

出　　处：《兵器材料科学与工程》2013年第6期29-31,共3页Ordnance Material Science and Engineering

基　　金：国家自然科学基金(51002045;51205111)

摘　　要：在Ar气氛保护下,以钛粉、硅粉、石墨粉和金刚石粉为原料,采用无压烧结技术制备Ti3SiC2-金刚石复合材料。研究烧结温度对制备的复合材料中Ti3SiC2含量及金刚石转变的影响。结果表明:1 400℃为制备Ti3SiC2-金刚石复合材料的最佳反应温度,高于此温度金刚石大量石墨化,低于此温度Ti3SiC2不能有效合成;生成的Ti3SiC2包裹在金刚石颗粒表层,两者之间存在明显的过渡区,表明在高温条件下金刚石颗粒表层发生石墨化相变;石墨化的碳元素参与Ti3SiC2合成反应,明显改善Ti3SiC2相与金刚石颗粒界面润湿性,提高Ti3SiC2与金刚石颗粒之间的界面结合力。Ti3SiC2-diamond composites were synthesized by pressureless sintering under flowing Ar atmosphere with the powders of Ti,Si,graphite and diamond. The effect of sintering temperatures on Ti3SiC2 content and diamond transformation was studied. The experimental results show that 1 400℃is the optimal temperature to synthesize desired composites. Higher temperature will result in the graphitization of diamonds. Lower temperature can not synthesize Ti3SiC2 effectively. The scanning electron microscopic analysis of as-synthesized composites shows that diamond particles are enclosed by synthesized Ti3SiC2,and obvious transition zones exist between diamond particles and Ti3SiC2. It is concluded that the graphite transformed from the surface layer of diamonds joins in the reaction of Ti3SiC2 synthesis,which significantly improves the interface wettability and increases the interface bonding between Ti3SiC2 and diamond particles.

关 键 词：TI3SIC2 金刚石 反应机理 界面结合 

分 类 号：TB332[一般工业技术—材料科学与工程]