腐蚀法制备碳化硅量子点标记材料及其光学性能  

Fabrication of Silicon Carbide Quantum Dots(QDs) for Labeling Living Cell via Chemical Etching Method and Its Optical Properties

作　　者：康杰[1,2] 宋月鹏[1,2,3] 高东升[2,3] 朱彦敏 毛志泉[2,3] 孙祥鸣[1,2] 尹承苗[2] 贾浩[1,2] KIM Hyoungseop 

机构地区：[1]山东农业大学机械与电子工程学院,山东泰安271018 [2]山东省园艺机械与装备重点实验室,山东泰安271018 [3]山东农业大学园艺学院,山东泰安271018 [4]浦项工科大学材料科学与工程学院,韩国浦项790784

出　　处：《硅酸盐学报》2013年第12期1714-1719,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51001111);"十二五"国家支撑计划项目(2011BAD12B02);山东省博士后创新基金项目(201203101);中国博士后科学基金项目(2013M531636)资助

摘　　要：以硝酸和氢氟酸为腐蚀液对自蔓延燃烧合成的纳米均质碳化硅颗粒进行腐蚀，而后进行超声空化破碎分散及高速离心处理，获得无细胞毒性的碳化硅量子点标记材料，对其微观结构的演变过程及光学性能进行检测，对出芽短梗霉菌（Aureobasidium pulluans）活体细胞进行标记并长时程荧光成像。结果表明，自蔓延合成的SiC粉体颗粒极易腐蚀成网格状镂空结构，超声空化破碎及高速离心层析剪裁后获得尺寸高度单分散的碳化硅量子点（约为1～2.5nm），小于体材料的激子Bohr直径（5.4nm），会产生强烈的光致发光效应。活体细胞标记及荧光成像结果表明，腐蚀法制备出的碳化硅最子点具有较高的生物相容性，同时对其标记及长时程荧光成像原理进行了初步探讨。Silicon carbide nanoparticles fabricated via self-propagating high-temperature synthesis （SHS） were etched in the mixture solution of nitric and hydrofluoric acid. The non-cytotoxic labeling material of silicon carbide quantum dots （QDs） were prepared by ultrasonic cavitation and high-speed centrifugation. The microstructure and optical performance of SiC QDs were analyzed. The living cell ofAureobasidium pulluans was labeled and observed by long-term-distance fluorescence imaging analysis. The results show that the SiC particles prepared by SHS are formed as a grid-like hollow structure in the mixture acid solution. The SiC QDs in the size range from 1 to 2.5 nm were fabricated by cavitation crushing with ultrasound and chromatography with high-speed centrifugal force, leading to the size of less than the corresponding exciton Bohr diameter （5.4 nm） for the intensive photoluminescence. Moreover, the SiC QDs prepared have a superior biocompatibility. In addition, the mechanism on the labeling and long-term-distance fluorescence imaging analysis of the living cells was also discussed.

关 键 词：化学腐蚀 碳化硅量子点 光致发光 活体细胞标记 出芽短梗霉菌 

分 类 号：O482[理学—固体物理] O614[理学—物理]