基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真  

SPICE simulation of organic resistive memory with structure of ITO/polymethylmethacrylate/Al

作　　者：容佳玲[1,2] 陈赟汉 周洁[1,2] 张雪[1,2] 王立[1,2] 曹进[2] 

机构地区：[1]上海大学材料科学与工程学院,上海200072 [2]上海大学,新型显示技术及应用集成教育部重点实验室,上海200072

出　　处：《物理学报》2013年第22期428-433,共6页Acta Physica Sinica

基　　金：上海自然科学基金(批准号:09ZR1411900);上海市科委(批准号:11100703200);上海大学创新基金(批准号:sdcx2012063)资助的课题~~

摘　　要：探索了ITO/PMMA/Al器件的阻变机理及其SPICE电路仿真,通过优化聚甲基丙烯酸甲酯(PMMA)层退火温度,器件可实现连续擦-读-写-读操作.基于不同退火温度PMMA薄膜的表面形貌研究,构建了单层有机阻变器件的非线性电荷漂移模型,以及描述该模型掺杂区界面移动的状态方程,并通过反馈控制积分器建立了SPICE仿真电路.最后,代入器件实际测量参数,得到与器件实际结果基本一致的电流-电压模拟曲线.结果验证了单层有机器件的阻变机理,说明该非线性电荷漂移模型的SPICE仿真在有机阻变器件仿真中同样适用.In this paper the resistive mechanism of the device with structure of ITO/PMMA/Al and the relevant SPICE simulation circuit are investigated. By optimizing the annealing temperature of PMMA, the devices can achieve continuous erasable-readable-writeable-readable operation. Based on the surface morphology researches of PMMA with different annealing temperatures, a physics model of nonlinear charge-drift mechanism in doping system is established to explain the resistance characteristics of the organic device. And the state equations are established to describe the interface movement of different doping regions in the model. Then, the SPICE simulation circuit is set up with feedback control integrator. Finally, substituting the measured parameters of device into the simulation circuit, we obtain the current-voltage simulation curve which is in good agreement with the actual results of the device. The results verify the resistance mechanism of nonlinear charge-drift in our device, and the applicability of the SPICE simulation of nonlinear charge-drift model based on inorganic memristors to the organic resistive memory.

关 键 词：有机阻变存储器 非线性电荷漂移 SPICE仿真 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]