MgB_2超导材料掺杂研究进展  

Research Progress of Doping in MgB_2 Superconducting Material

作　　者：付尧[1] 张松[1] 吴燕平[1] 邓朝勇[1] 

机构地区：[1]贵州大学理学院贵州省电子功能复合材料特色重点实验室,贵阳550025

出　　处：《材料导报》2013年第21期19-24,共6页Materials Reports

基　　金：国家自然科学基金(51002035)

摘　　要：元素掺杂可以提升MgB2在磁场中的性能,解决其超导性能在磁场环境下的退化问题,对MgB2超导材料的应用具有重大意义。介绍了元素掺杂MgB2的目的及作用机理,从薄膜、块材、线带材3个方面具体综述了纳米SiC和有机物掺杂MgB2超导体的研究进展,系统总结了烧结温度及有机物掺杂量对MgB2超导体的性能影响,深入分析了有机物掺杂改善MgB2超导性能的微观原因。The in-field superconducting performance of Mg~ could be improved by element doping, which can solve the problem of its performance loss in magnet field, there are great significance for its practical application. The purpose and mechanism of element doping on Mg~ are summarized, then the research progress on nano-SiC doping and hydrocarbon doping of MgBz is presented. The effect of sintering temperature and the addition amount of hydro- carbon on superconducting performance of MgB2 are systematically discussed, and the microscopic origin which make the improved performance of hydrocarbon doped Mg~ is deeply analyzed.

关 键 词：MGB2 临界电流密度 上临界场 SIC掺杂 有机物掺杂 

分 类 号：TM26[一般工业技术—材料科学与工程] TH142.8[电气工程—电工理论与新技术]