射频反应磁控溅射法氧化钒薄膜的制备及其性能研究  

Study on VO_2 Thin Films Prepared by RF Magnetron Sputtering and Its Properties

作　　者：陈颖超[1] 刘彭义[1] 唐振方[1] 叶勤[1] 

机构地区：[1]暨南大学物理系,广州510632

出　　处：《材料导报》2013年第22期26-28,共3页Materials Reports

基　　金：广东省自然科学基金(S2011010002575)

摘　　要：采用射频反应磁控溅射法在普通玻璃衬底上沉积氧化钒薄膜,在高纯N2环境中,不同温度下(350℃、400℃、450℃、500℃)热处理60min,发现当热处理温度为400℃时,获得具有相变特性的VO2薄膜,其红外光透光率和电导率发生显著变化。薄膜相变温度为55℃左右,相变前后光透过率变化了13%,电阻变化了1.8个数量级。Vanadium oxide thin films were deposited on glass substrate by RF magnetron sputtering at room temperature.The films were annealed at 350 ℃,400 ℃,450 ℃,500 ℃ for 60 min in the environment of high purity N2,respectively.The VO2 thin films with the properties of phase transition were obtained when the heat treatment temperature was 400 ℃.The results show that the phase transformation temperature of the film is about 55 ℃,the light transmittance changes 13%,the change in resistance is 1.8 orders of magnitude before and after the phase transition.

关 键 词：VO2薄膜 射频磁控溅射 相变 

分 类 号：TB43[一般工业技术]