弱酸环境下硅纳米线的水热可控合成及其光学性能  

Hydrothermal controlled-synthesis in weak acid environment and optical performance of silicon nanowires

作　　者：周诗文[1,2] 唐元洪[2] 郭池[2] 

机构地区：[1]海南大学材料与化工学院,海南海口570228 [2]湖南大学材料科学与工程学院,湖南长沙410082

出　　处：《现代化工》2013年第11期47-49,51,共4页Modern Chemical Industry

基　　金：海南大学青年基金项目(qnjj1236)

摘　　要：以去离子水为溶剂,SiO为硅源,调节溶液的pH为6,加热至470℃,8 MPa保温8 h,成功制备出硅纳米线。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射显微镜(TEM)对硅纳米线进行了结构和形貌表征,采用光致发光(PL)光谱分析了硅纳米线的光学性能。结果表明:硅纳米线为立方金刚石结构,其生长端呈半圆形的闭合结构,纳米线由晶面间距约0.31nm的晶体硅内核与厚度小于10 nm的无定形氧化硅外鞘两部分组成;PL光谱显示硅纳米线在431 nm和462 nm处具有良好的发光性能。Silicon nanowires （SiNWs） are successfully synthesized by the hydrothermal method in weak acid environment at 470℃ and 8 MPa for 8 h with SiO as the silicon source and deionized water as the liquid solvent, when the pH value of solvent environment is equal to 6. The structure and morphology of as-prepared products are measured by X- ray diffraction （ XRD ）, scannig electron microscope （ SEM ）, transmission electron microscopy （ TEM ）. The optical properties of the products are analysed by PL spectrum. Research results demonstrate that the silicon nanowires with cubic diamond structure have close caps at the tips. The structures of SiNWs are composed of a crystal silicon with about 0. 31 nm interplanar spacing of the inner core and an amorphous silica outer layer of less than 10 nm. The PL spectrum shows the SiNWs have excellent optical performance at 431 nm and 462 nm of the luminescence peak position.

关 键 词：硅纳米线 水热法 光致发光 

分 类 号：TQ031.2[化学工程] O613.72[理学—无机化学]