DDR3内存的PCB仿真与设计  

DDR3 PCB Simulation and Design

作　　者：金俊英[1] 秦娟[1] 

机构地区：[1]中国电子科技集团公司第三十二研究所,上海200233

出　　处：《中国科技信息》2013年第23期65-69,共5页China Science and Technology Information

摘　　要：随着计算机技术的发展,存储器设计在整个系统中占有重要地位,目前DDR3内存已成为主流应用。本文针对DDR3技术特点结合相关仿真技术总结出PCB设计规则,并通过验证DDR3信号完整性和时序关系,缩短设计周期,提升了整个研发水平。With the development of computer technology, the design of memorizer plays a significant role in the whole system. In the present age, it is a main trend to use DDR3 memory. This paper summarized PCB design rules according to the characters of DDR3 technology and simulation technology and validated the integrality and timing connections of DDR3 signals in order to shorten the design cycle and improve the level of the study.

关 键 词：DDR3存储器 拓扑 信号完整性 仿真 时序分析 动态终端电阻 

分 类 号：TN41[电子电信—微电子学与固体电子学]