紧凑型P波段1kW功率放大器的设计  

Design of Compact P-Band 1 kW Power Amplifier

作　　者：杨大宝[1] 沈林泽[2] 

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第12期919-923,共5页Semiconductor Technology

摘　　要：基于宽边耦合线理论,设计和制作了一种P波段1 kW微波脉冲功率放大器。详细介绍了高功率宽边带状线耦合器功率合成器的设计方法,并对3路功率合成器进行了仿真计算,给出了计算结果。创造性地利用弯曲悬置微带线代替了直行悬置微带线作为耦合器,这种设计有效减少了高功率合成器的尺寸,从而实现整个脉冲功放的小型化,整个功放尺寸小于222 mm×82 mm×20 mm。采用国产硅基高增益功率器件代替了LDMOS器件的方法提高了放大器可靠性,讨论了Si双极晶体管相对于LDMOS器件的可靠性改善,实验结果表明这种小型化高功率放大器具有可靠性高的特点。Based on the theory power amplifier was designed and of the broadside stripline coupler, a P-band 1 kW pulsed microwave fabricated. The design method of the high power wide-brimmed stripline coupler power synthesizer was introduced in detail, and the three-way serial power combiner was simulated and its results were demonstrated. A bending broadside stripline replaced the traditional straight one creatively, so the high power combiner＇s size could be reduced effectively, and the power amplifier＇ final size is less than 222 mm ×82 mm× 20 mm. The dometic silicon high gain power device instead of LDMOS device improves the amplifier reliability, the reliability improvement of Si bipolar transistor related to LDMOS device is discussed. The test results show that the small-size high power amplifier has the high reliability.

关 键 词：宽边耦合线 P波段 功率放大器 小型化 高可靠性 

分 类 号：TN722.75[电子电信—电路与系统]