不同纯度冶金级硅电导率随温度的变化  

Conductivity Changes with Temperature for Metallurgical Grade Silicon of Different Purity

作　　者：杨玺[1] 吕国强[1] 马文会[1] 罗涛[1] 

机构地区：[1]昆明理工大学,冶金与能源工程学院,真空冶金国家工程实验室,云南省高校硅冶金与硅材料工程研究中心,昆明650093

出　　处：《机械工程材料》2013年第12期71-74,共4页Materials For Mechanical Engineering

基　　金：国家自然科学基金资助项目(51066003,U1137601);国家科技支撑计划项目(2011BAE03B01)

摘　　要：在不同温度下,采用自主设计的测试设备测试了不同纯度和不同厚度的冶金级硅的电导率,分析了冶金级硅的纯度对电导率的影响。结果表明:采用厚度较薄的硅片进行电导率测试能更准确反映出电导率随温度的变化关系;当温度达到650℃以上时,本征激发作用明显,冶金级硅电导率开始迅速增大,并且纯度较高、金属杂质含量较少的硅电导率随温度的升高增幅较大;最后,根据测量出的电导率进行了数值拟合,得到了冶金级硅电导率随温度变化的数学表达式。The conductivity of metallurgical grade silicon （MG-Si） in different purities and thicknesses was measured under different temperatures by selPdesigned test equipment. The influence of MG-Si purity on the conductivity was analyzed. The results show that the thinner silicon wafer can reflect the relationship between its conductivity and temperature accurately. When the temperature was above 650℃, the conductivity of MG-Si increased rapidly responding to the obvious effect of intrinsic excitation, and the conductivity of higher purity MG-Si containing fewer metallic impurities increased considerably with the increase of temperature. Finally, the mathematical expression of the conductivity of MG-Si with temperature changes was obtained by numerical fitting according to the measured conductivity values.

关 键 词：冶金级硅 电导率 温度变化 金属杂质 

分 类 号：TG146.1[一般工业技术—材料科学与工程]