神光Ⅲ中退偏现象对系统隔离比的影响  

Research on isolation ratio limit induced by depolarization in Shenguang-Ⅲ laser facility

作　　者：温静[1] 张鑫[1] 周维[1] 唐菱[1] 王渊承[1] 邓武[1] 胡东霞[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《强激光与粒子束》2013年第12期3197-3200,共4页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：通过离线实验指出了神光Ⅲ主机装置联机调试阶段中限制系统隔离比提高的主要因素来自于转角体结构中反射膜引入的退偏效应。从膜系理论出发建立了神光Ⅲ主机装置中的转角体结构的反射系数的计算模型,进而通过计算指出了退偏效应的主要来源是反射膜层厚度的偏差,然后通过数值计算与离线实验结果的对比确定了转角体结构中各个反射镜的反射系数。由此得到了转角体结构的总反射系数及其造成的神光Ⅲ主机装置系统隔离比的提升上限和进一步提升系统隔离比的思路。Laser depolarization induced by the propagation rotation structure would greatly affect the isolation ratio of the Shenguang Ⅲ laser facility. We build a simulation model on the reflectance coefficient of the propagation-rotation structure based on the film system theory, and point out that the depolarization origins from the reflective film thickness error. Through compari- son between the simulation result and the off-line experimental result, we obtain the reflectance coefficient of each reflective film inside the propagation rotation structure. Furthermore, we obtain the total reflectance coefficient of the propagation rotation structure and then the system isolation ratio limit.

关 键 词：退偏效应 反射系数 隔离比 高功率固体激光器 

分 类 号：TN248.1[电子电信—物理电子学]