A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure  

作　　者：李冰华 江兴川 李志贵 林信南 

机构地区：[1]The Key Laboratory of Integrated Microsystems,School of Electronic and Computer Engineering,Peking University Shenzhen Graduate School

出　　处：《Journal of Semiconductors》2013年第12期30-33,共4页半导体学报（英文版）

基　　金：Project supported by the Guangdong Science&Technology Project(No.2010B090400443);the Shenzhen Science&Technology Foundation(Nos.JC201005270276A,ZD201006110039A);the Longgang Science&Technology Developing Foundation

摘　　要：A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.

关 键 词：accumulation channel semi-superjunction structure BV SCSOA 

分 类 号：TN322.8[电子电信—物理电子学]