Modeling and parameter extraction of CMOS on-chip coplanar waveguides up to 67 GHz for mm-wave applications  

作　　者：罗俊 张雷 王燕 

机构地区：[1]Institute of Microelectronics,Tsinghua University

出　　处：《Journal of Semiconductors》2013年第12期102-108,共7页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(No.2010CB327404);the National High Technology Research and Development Program of China(No.2011AA010202);the National Science and Technology Major Project of China(No.2012ZX03004004);the National Natural Science Foundation of China(Nos.61176034,61101001,61204026);the Tsinghua University Initiative Scientific Research Program

摘　　要：Coplanar waveguides （CPW） are widely used in mm-wave circuits designs for their good performance. A novel unified model of various on chip CPWs for mm-wave application, together with corresponding direct parameter extraction methodologies, are proposed and investigated, where standard CPW, grounded CPW （GCPW） and CPW with slotted shield （SCPW） are included. Several kinds of influences of different structures are analyzed and considered into the model to explain the frequency-dependent per-unit-length L, C, R, and G parameters, among which the electromagnetic coupling for CPWs with large lower ground or shield is described by a new C-L-R series path in the parallel branch. The direct extraction procedures are established, which can ensure both accuracy and simplicity compared with other reported methods. Different CPWs are fabricated and measured on 90-nm CMOS processes with Short-Open-Load-Through （SOLT） de-embedding techniques. Excellent agreement between the model and the measured data for different CPWs is achieved up to 67 GHz.Coplanar waveguides （CPW） are widely used in mm-wave circuits designs for their good performance. A novel unified model of various on chip CPWs for mm-wave application, together with corresponding direct parameter extraction methodologies, are proposed and investigated, where standard CPW, grounded CPW （GCPW） and CPW with slotted shield （SCPW） are included. Several kinds of influences of different structures are analyzed and considered into the model to explain the frequency-dependent per-unit-length L, C, R, and G parameters, among which the electromagnetic coupling for CPWs with large lower ground or shield is described by a new C-L-R series path in the parallel branch. The direct extraction procedures are established, which can ensure both accuracy and simplicity compared with other reported methods. Different CPWs are fabricated and measured on 90-nm CMOS processes with Short-Open-Load-Through （SOLT） de-embedding techniques. Excellent agreement between the model and the measured data for different CPWs is achieved up to 67 GHz.

关 键 词：CPWs unified model direct extraction MM-WAVE 67 GHz CMOS 

分 类 号：TN432[电子电信—微电子学与固体电子学]