Transport and magnetoresistance effect in an oxygen-deficient SrTiO_3/La_(0.67)Sr_(0.33)MnO_3 heterojunction  

作　　者：王晶 陈长乐 杨世海 罗炳成 段萌萌 金克新 

机构地区：[1]Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University [2]College of Physics and Electronic Engineering, Weinan Normal University

出　　处：《Chinese Physics B》2013年第12期422-425,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61078057,51172183,and 51202195);the Natural Science Foundation of Shaanxi Province,China(Grant No.2012JQ8013);the Aviation Foundation of China(Grant No.2011ZF53065);the Foundation for Fundamental Research of Northwestern Polytechnical University(NPU),China(Grant Nos.JC201155,JC201271,and JC20120246)

摘　　要：An oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction is fabricated on an SrTiO3 （001） substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∝ exp （eV/nkT） under small forward bias, while it becomes space charge limited and follows I ∝ Vm（T） with 1.49〈 m 〈1.99 under high bias. Such a heterojunction also exhibits magnetoresistance （MR） effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H=0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics.An oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction is fabricated on an SrTiO3 （001） substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∝ exp （eV/nkT） under small forward bias, while it becomes space charge limited and follows I ∝ Vm（T） with 1.49〈 m 〈1.99 under high bias. Such a heterojunction also exhibits magnetoresistance （MR） effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H=0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics.

关 键 词：semiconductors multilayer structure electrical properties magnetoresistance 

分 类 号：O482.5[理学—固体物理]