Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells  

作　　者：龚伟 徐征 赵谡玲 刘晓东 樊星 杨倩倩 孔超 

机构地区：[1]Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education [2]Institute of Optoelectronics Technology, Beijing Jiaotong University

出　　处：《Chinese Physics B》2013年第12期503-508,共6页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2010CB327704);the National Natural Science Foundation of China(Grant No.51272022);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-10-0220);the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20120009130005);the Fundamental Research Funds for the Central Universities,China(Grant No.2012JBZ001)

摘　　要：We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.

关 键 词：NPB capacitance–voltage measurement charge collection buffer layer 

分 类 号：TM914.4[电气工程—电力电子与电力传动]