金属辅助湿法化学刻蚀黑硅机理的探讨  

Investigation on the Mechanism of Metal-assisted Chemical Etching Used for Black Silicon Preparation

作　　者：廖承菌[1,2] 杨培志[1,2] 廖华[1,2] 李学铭[1,2] 

机构地区：[1]可再生能源材料先进技术与制备教育部重点实验室,云南昆明650092 [2]云南师范大学太阳能研究所,云南昆明650092

出　　处：《云南师范大学学报（自然科学版）》2013年第5期22-28,共7页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家自然科学基金资助项目(61066004;U1037604)

摘　　要：为了理解金属辅助湿法化学刻蚀的机理,单晶硅片分别在氢氟酸/过氧化氢/氯金酸(HF/H2O2/HAuCl4)体系、氢氟酸/硝酸/硝酸银(HF/HNO3/AgNO3)体系、氢氟酸/过氧化氢/硝酸铜(HF/H2O2/Cu(NO3)2)体系中被刻蚀,经过三种体系刻蚀的单晶硅样品的减重量与减薄量之比值分别约为1.622、0.960、0.560.利用电动模型分析认为:差异性刻蚀的发生主要取决于电子的得失和电荷的传输两个方面。In order to understand the mechanism of metal-assisted chemical etching,silicon wafer was etched using metal-assisted chemical etching under HF/H2O2/HAuC14 system,HF/HNO3/AgNO3 system,HF/H2O2/Cu（NO3）2 system,respectively.The results show that the silicon wafer,which reduced weight and the ratio of reduced thickness is 1.622,0.960,0.560,respectively.The occurrence of differences in etching depends mainly on two aspects of the electric charge transfer and its gains and losses.

关 键 词：黑硅 增强广谱吸收 金字塔绒面 

分 类 号：TN305.2[电子电信—物理电子学]