赫兹型微裂纹光场调制增强作用的系统研究  

Systematic studies on the field enhancement effect of Hertzian microcracks

作　　者：蔡月飞[1] 吕志伟[1] 李森森[1] 王雨雷[1] 朱成禹[1] 林殿阳[1] 何伟明[1] 

机构地区：[1]哈尔滨工业大学光电子研究所,可调谐激光国家重点实验室,哈尔滨150001

出　　处：《物理学报》2013年第23期173-178,共6页Acta Physica Sinica

摘　　要：通过改变裂纹的倾角、宽度和深度参数,模拟了赫兹型裂纹在不同参数下对光场调制能力的不同.模拟发现,倾斜角度为20.9到45之间的裂纹危害最大,倾角大于45小于48.2的裂纹危害也十分大,而倾斜角度为45时的裂纹危害最小.对于30倾角的赫兹型裂纹,一定范围内,赫兹型裂纹深度的增加会导致其光场调制增强能力呈二次方关系增加,但宽度的增加不会使其光场调制增强作用增加.裂纹深度和宽度的增加可以用来近似裂纹的演化过程,所以裂纹的扩展导致了其光场调制能力的增加,进而导致损伤增长速率的加快,这和e指数损伤增长规律相符.In order to study the effect of micro-cracks on the damage growth, the different field enhancements of the Hertzian micro crack are investigated by varying its angle, width, and depth. Simulation results show that the most harmful cracks are those with inclination angles from 20.9° to 45°, and the cracks with an angle less than 45° and larger than 48.2° are also harmful, but the cracks with inclination angle of 45° are the least harmful. Increasing the depth of the Hertzian cracks will lead to their field enhancement factors increasing with a quadratic relationship. However, increasing the width does not make it essential to the increase of its field enhancement ability. The development of micro-cracks can be approximated by increase its depth and width, so the development of cracks will lead to the increase of its light field modulation capability, and also to its damage growth rate to accelerate, following an exponential law.

关 键 词：损伤增长 亚表面缺陷 赫兹型裂纹 光场增强 

分 类 号：TN24[电子电信—物理电子学] O346.1[理学—固体力学]