Pr掺杂和Pr-Y共掺杂Zn-Bi系压敏电阻性能的研究  

The study of Zn-Bi systemvaristor with Pr doping and Pr-Y co-doping

作　　者：刘建科[1] 王秀峰[1] 陈永佳[1] 

机构地区：[1]陕西科技大学理学院,陕西西安710021

出　　处：《功能材料》2013年第B12期316-320,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51272145);陕西省自然科学基金资助项目(2011JM1014)

摘　　要：主要研究了Pr掺杂对Zn-Bi系压敏电阻的性能的影响。当Pr6O11掺杂量为5.49%(质量分数),烧成温度为1150℃时,压敏电压达到400V/mm;当Pr6O11掺杂量为3.37%(质量分数),烧成温度为1200℃时,非线性系数达到48。研究还发现Pr-Y共掺杂能显著地提高Zn-Bi系压敏电阻的压敏电压,但会对体系的非线性系数和漏电流产生不利影响。In this article, we mainly studied the effects of Pr doping Zn-Bi system on its properties. The results show that when the sintering temperature was 1150 ℃ and the dopant of Pr6Oll was 5.49w%, the varistor voltage got 400 V/mm and when the temperature was 1200 ℃and 3.37wt Pr6Ol doping, the nonlinear co efficient got 48. Study also find that the codoping of Pr-Y can significantly improve the varistor voltage of Zn- Bi system, but it has the adverse effects on the nonlinear coefficient and leakage current.

关 键 词：压敏电阻 掺杂 压敏电压 非线性系数 漏电流 

分 类 号：TQ174[化学工程—陶瓷工业]