Stable field emission of ion-sputtering-induced Si nanocone arrays  

作　　者：薛绍林 吴淑贤 邱迎 陆明 

机构地区：[1]College of Science,Donghua University [2]Department of Optical Science and Engineering,and Key Laboratory for Micro and Nano Photonic Structures(Ministry of Education),Fudan University

出　　处：《Chinese Optics Letters》2013年第11期58-61,共4页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61072003,60878044,and 60638010);the National"973"Project of China(No.2010CB933703)

摘　　要：Silicon nanocone arrays with metal silicide （Fe and Cr）-enriched apexes are fabricated on Si （100） substrate by the Ar＋ ion bombardment method. The nanocone arrays show excellent field emission properties. A high current density （J） of -0.03 mA/cm^2 under a field of -3 V/μm, a very low turn-on field of -1.4 V/μm, and a very large enhancement factor of -9466 are also obtained. The emission J of Si nanocone arrays remains extremely stable for long periods of time （24 h）.Silicon nanocone arrays with metal silicide （Fe and Cr）-enriched apexes are fabricated on Si （100） substrate by the Ar＋ ion bombardment method. The nanocone arrays show excellent field emission properties. A high current density （J） of -0.03 mA/cm^2 under a field of -3 V/μm, a very low turn-on field of -1.4 V/μm, and a very large enhancement factor of -9466 are also obtained. The emission J of Si nanocone arrays remains extremely stable for long periods of time （24 h）.

关 键 词：Field emission Ion bombardment SILICIDES 

分 类 号：TN201[电子电信—物理电子学]