无铅侧面釉工艺参数的优化  

The Optimization of Lead-free Flank Glaze Technological Parameters

作　　者：李宏杰 肖永强 张志旭 卫海民 蒋文军 席建全 曲海霞 

机构地区：[1]西安创联宏晟电子有限公司,西安710065 [2]西安瑞泰电气有限公司,西安710061

出　　处：《电瓷避雷器》2013年第6期39-42,共4页Insulators and Surge Arresters

摘　　要：研究了无铅侧面釉工艺参数:玻璃粉的粒度、载体的用量、喷涂重量及烧结温度对避雷器非线性电阻片性能的影响。当玻璃粉的粒度为d50=7.8μm,载体添加量为玻璃粉重量的30%时,涂层重量为2.5±0.2g/片(以准42×22郇电阻片为例),烧结温度在520±10℃时,制备的电阻片性能为:漏电流≤3μA,500 A方波试验和100 kA大电流冲击不发生闪络,压敏电压和残压比处于正常控制范围。The effect of the lead-free flank particle, the carrier amount, the coating weight and glaze technology parameters：the glass powders the sintering temperature on the ZnO varistor are studied. When the glass powders particle is d50=7.8μm and the carrier amount is 30% of the glass powders, the coating weight is 2.5±0.2 g/cm2（for example the φ42±22 ZnO varistor）; when the sintering temperatrure is 520±10℃, the manufactured ZnO varistor properties are： leakage current ≤3μA, the 500A square wave test and 100 kA big current impact test is passed, and the varistor voltage and the voltage ratio is under normal control range.

关 键 词：无铅玻璃粉 避雷器非线性电阻片 侧面釉 漏电流 方波试验 大电流冲击 

分 类 号：TM862[电气工程—高电压与绝缘技术]