背钝化高效晶硅电池的研究  

作　　者：刘进[1,2] 

机构地区：[1]山西潞安太阳能科技有限公司,山西长治046001 [2]上海大学材料科学与工程学院,上海200072

出　　处：《中国化工贸易》2013年第12期239-240,共2页CHINA CHEMICAL TRADE

摘　　要：背场钝化技术作为高效电池技术中的一种，在降低背表面复合速率，提高太阳电池长波响应，修复背表面态方面具有明显优势，．本文采用SiNx／SiO2双层钝化层制备背场钝化电池片（BSP），并对其电学性能进行探讨，SiNJSiO：双层钝化层电池与常规工艺电池相比在Isc、Voc和Eft都会有一定提高，通过电池片IQE分析发现，该电池在长波区域的IQE响应比正常电池片有明显提升。BSF (Back surface passivation) technology as an efficient battery technology, to reduce the back surface recombination ve-locity,the efficiency of solar cell long wave response,there are advantages to repair the dorsal surface state. This paper adopts SiNx/SiO2 dou-ble passivation layer for the preparation of BSF passivation cell (BSP),and the electrical property of the cell, SiNx/SiO2 double passivation layer as compared with the conventional process of cell in the Isc, Voc and Eff have improved. The cell IQE analysis showed that the cell response compared to normal cell has improved significantly in the long wavelength region of IQE.

关 键 词：背场钝化SiNx SiO2双层钝化层1QE响应 

分 类 号：TM914.41[电气工程—电力电子与电力传动]