基于加速寿命实验的GaNHEMT可靠性研究  

Reliability Estimation of GaN HEMT Based on Accelerated Life Testing

作　　者：陈斯文[1] 高晖[2] 许海涛[2] 

机构地区：[1]海军驻南京地区电子设备军事代表室,南京210013 [2]南京电子技术研究所,南京210039

出　　处：《现代雷达》2013年第12期76-79,共4页Modern Radar

摘　　要：GaN HEMT的出现,使得有关电子设备性能的大幅度提升成为了可能。为了尽快实现该器件的工程化应用,需要对器件的可靠性进行相关研究。基于阿伦尼乌斯模型对某型号GaN HEMT进行了加速寿命试验,结果显示,该功率管MTTF>2×106h(85℃,长脉宽,大占空比)。相关结果可为用户开展GaN功率管的可靠性设计等相关研究提供数据支持。The appearance of GaN high-electron-mobility transistors （HEMT） makes it possible that the revelant electronic devices performances will be improved by a large level. However, the reliability problem is one of the issues that remain to be resolved in order to move toward commercially available devices. In this paper, the accelerated lift testing of a kind of homemade GaN HEMT was developed. The results showed that, the MTTF of this module is larger than 2×106 h （85℃ ,long pulse width and high duty cy- cle）. These conclusions and the data listed in this paper can be referenced in the researches on the reliability estimation of the wide band-gap semiconductors power devices.

关 键 词：GaN功率管 加速寿命实验 可靠性 

分 类 号：TN303[电子电信—物理电子学]