平栅型氧化锡表面传导电子发射源的制备及场发射性能研究  

Fabrication and Field Emission Properties of Surface-coduction Electron-Emission Source Based on Planar-Gate Triode with SnO_2 Film

作　　者：张永爱[1] 林锑杭[1] 曾祥耀[1] 张杰[1] 周雄图[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002

出　　处：《真空科学与技术学报》2013年第12期1214-1218,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61306071);福建省自然科学基金项目(2013j01236)

摘　　要：利用磁控溅射、光刻和剥离技术在玻璃基底上成功制备了平栅型氧化锡表面传导电子发射源，并测试其场发射性能。扫描电镜和光学显微镜测试表明，沉积在阴极和栅极之间的氧化锡为不连续薄膜，直径大约在100～200nm。场发射测试表明，电子发射源的传导电流和发射电流完全被栅压控制。在阳压和栅压分别为3200V和210V时，阴阳间距为500μm时，平栅型氧化锡表面传导电子发射源的电子发射效率为0．85％，发光亮度为850ed／m2，表明氧化锡薄膜在表面传导电子发射源方面有着较好的应用潜力。The surface-conduction electron-emission source, based on planar-gate triode with SnO2 film emitters, has been successfully fabricaed on glass substrate by magnetron sputtering, photolithography, and lift-off technology. The mi- crostructures and field emission characteristics were characterized with scanning electron microscopy （SEM） and optical microscopy. Theresults show that the islands of tin oxide, about 100- 300 nm in diameter,were depostied at the gap be- tween the cathode and gate electrode, and that the gate voltage was capable of effectively controlling the emission and con- duction currents . The electron-emission eftlciency was found to be around 0.85% and the maximun brightness could reach 850 cd/m2, indicating that the SnO2 film may be a good material for fabrication of surface-conduction electron-con- duction electron-emission source based on planar-gate triode.

关 键 词：氧化锡薄膜 平栅型 表面传导 电子发射源 

分 类 号：TB332[一般工业技术—材料科学与工程]