1.06μm激光辐照CCD探测器的热力效应分析  

Thermal and mechanical damage in CCD detector induced by 1.06 μm laser

作　　者：聂劲松[1] 王玺[1] 李化[1] 卞进田[1] 郝向南[1] 

机构地区：[1]脉冲功率激光技术国家重点实验室(电子工程学院),安徽合肥230037

出　　处：《红外与激光工程》2013年第S02期380-386,共7页Infrared and Laser Engineering

摘　　要：根据CCD探测器的结构特点和传热学理论,建立了1.06μm激光辐照CCD探测器的理论模型,利用有限元法对1.06μm激光辐照CCD探测器中的温度和应力分布进行了数值分析,讨论了CCD探测器的激光损伤机理,并比较了不同重频激光的损伤效果。计算结果表明,遮光铝膜与SiO2层的分离和硅材料的应力、熔融损伤会导致CCD器件损伤;平均功率密度一定的条件下,高重频激光比连续激光更容易造成CCD探测器的损伤,且重频越低,损伤越容易发生。According to the structure of CCD detector and the theory of thermal conduction, the theoretical model of CCD detector irradiated by 1.06μm laser is developed and a numerical simulation was performed to calculate temperature and stress distribution in CCD detector irradiated by 1.06 μm laser using finite element method. The thermal and mechanical damage in CCD detector induced by 1.06μm laser is investigated. Besides, the causes of CCD detector’s impairment and damage effects of laser working in different state were discussed. Al film’s separation from SiO2, thermal-stress and fusion impairment of Si could lead to damage of CCD detector. With the average power density unchanged, CCD detector was more vulnerable to laser of high pulse repetitive frequency （PRF） than to CW-laser. And the lower the PRF was, the more easily the injury might occur.

关 键 词：激光损伤 数值分析 CCD探测器 

分 类 号：TN249[电子电信—物理电子学]