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出 处:《价值工程》2014年第1期53-55,共3页Value Engineering
摘 要:本文详细分析了光控晶闸管设计原理。通过对特殊的门极结构和工艺设计,成功研制了在器件内部集成了光触发功能区、内部过压保护器、内置保护电阻,使其具有正向恢复保护和dv/dt保护功能的5英寸3125A/7600V光控晶闸管。该晶闸管技术参数达到了国外同等水平。已成功应用到我国的"云-广±800KV/5000MW"特高压直流输电(UHVDC)工程中。This paper detailedly analyzes the design principle of light triggered thyristor. By special gate structure and processes design, a light-triggering function, a break-over diode, a turn-on protection resistor, a forward recovery protection function as well as dv/dt protection function are all integrated in 5 inch single chip. The wafer's blocking voltage is more than 7600V and its current capacity is higher than 3125A. Tested data shows the technology parameters of the devices arriving to the equivalence level of the foreign congener product. The devices have been successfully used in "YUN-GUANG +-800KV/5000MW" UHVDC project in China.
分 类 号:TN34[电子电信—物理电子学]
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