负阻补偿型CMOS高Q值超宽带可调谐有源电感  

A High-QTunable CMOS Active Inductor with Negative Resistance Compensation for Ultra-Wideband

作　　者：周孟龙[1] 张万荣 谢红云[1] 金冬月[1] 丁春宝[1] 高栋[1] 张卿远[1] 鲁东[1] 霍文娟[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《微电子学》2013年第6期751-755,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60776051;61006044;61006059);北京市自然科学基金资助项目(4082007);北京市教委科技发展计划资助项目(KM200710005015;KM200910005001);北京市优秀跨世纪人才基金资助项目(67002013200301);北京市人才强教深化计划-服务北京创新人才培养项目(0020005412A001)

摘　　要：基于CMOS有源器件和传输线,提出了一款面积小、电感值大、品质因子(Q)高的超宽带可调有源电感电路拓扑。该有源电感利用CMOS有源器件级联反馈结构提供偏置,采用负阻补偿网络补偿有源电感正电阻损耗,增大了Q值,同时也实现了对有源电感器电感值的调谐。采用TSMC 0.35μm CMOS工艺,设计并实现了有源电感的电路和版图。ADS仿真验证表明,在3.1～5.2GHz工作频率范围内,随外部偏置的不同,等效电感值的可调范围为1.65～4.06nH(在3.1GHz下)和0.06～40.9nH(在5.2GHz下),Q值最小达到1 002.9,面积仅为65×86(μm2)。An ultra-wideband tunable active inductor circuit topology with small size, large inductance and high quality factor （Q） was proposed based on CMOS active device and transmission line. In this circuit, CMOS active device cascade feedback structure was used to provide feedback bias, and a negative resistance compensation network was employed to compensate positive resistance loss of the active inductor, which improved its Q value and enable its inductance to be tunable. The active inductor circuit and layout was designed using TSMC 0. 35μm CMOS process, and simulation was made with ADS of Agilent. Results showed that the equivalent inductance value of the active inductor was tunable from 1.65 nH to 4.06 nH at 3.1 GHz and from 0. 06 nH to 40. 9 nH at 5.2 GHz, depending on external bias voltage, and the minimum Q value was up to 1 002.9. The chip occupied a silicon area of only 65 X 86 （μ㎡ ）.

关 键 词：CMOS 有源电感 负阻补偿网络 

分 类 号：TN432[电子电信—微电子学与固体电子学]