基于GMI效应的高灵敏磁探测技术  

High Sensitive Magnetic Detection Technology Based on Giant Magneto-impedance Effect

作　　者：魏双成[1,2] 邓甲昊[1,2] 杨雨迎[1,2] 

机构地区：[1]机电动态控制重点实验室,北京100081 [2]北京理工大学机电学院,北京100081

出　　处：《弹箭与制导学报》2013年第5期149-151,158,共4页Journal of Projectiles,Rockets,Missiles and Guidance

基　　金：国家自然科学基金(60874100);总装预研基金资助

摘　　要：以非晶丝GMI(giant magneto impedance,巨磁阻抗)效应制成的磁传感器常采用负反馈回路,这增加了制作难度和电路功耗。为此,设计了一种特殊结构的磁敏感元件,能有效消除高频脉冲的干扰,以单片机为控制核心制成高灵敏度磁探测器。实验结果表明:探测器在±1 Oe磁场范围内具有良好的线性和磁场灵敏度,其磁场分辨率高达10nT,适用于微小铁磁物体和远距离普通铁磁物体的探测。Magnetic sensor made from giant magneto impedance effect （GMI） in amorphous wire always has negative feedback loop. This increases manufacturing difficulty and consumption of sensor. To solve the problem, a special structure of magneto impedance （MI） ele- ment was designed to eliminate the interference of high frequency pulse. High sensitive magnetic detector was made of the key single chip. Experiment results show that the detector has good linearity and high sensitivity within the range from - 10e to I Oe. The resolution of the detector reaches 10 nT. The detector could be used to detect small magnetic target and common magnetic target in far distance.

关 键 词：非晶丝 GMI效应 磁敏感元件 磁探测 高灵敏度 

分 类 号：O482.54[一般工业技术—材料科学与工程]