高效晶硅太阳电池的发展与抑制光衰的研究进展  

Development of High Efficiency Crystalline Silicon Solar Cells and the Research Progress of Suppressing Light-induced Degradation

作　　者：杨淑云[1] 李宁[1] 丰云恺[2] 任丽[2] 任丙彦[1] 

机构地区：[1]河北工业大学材料科学与工程学院,天津300130 [2]河北工业大学化工学院,天津300130

出　　处：《硅酸盐通报》2013年第12期2533-2537,共5页Bulletin of the Chinese Ceramic Society

基　　金：国家高技术研究发展(863)计划(2012AA05031);河北省自然科学基金项目(F2012202090)

摘　　要：晶硅太阳电池在光伏发电中占有80%以上的市场份额,其科技进步主导着光伏发电的走向。随着晶硅太阳电池光电转换效率的提高,其光衰也随之提高,成为高效晶硅电池科技发展的瓶颈。研究发现,硅中的杂质补偿度和B-O复合体均能造成电池的"光衰"。利用掺镓硅单晶替代掺硼硅单晶并严格控制硅中的杂质补偿度能够大大抑制光衰,其机理和工艺的研究对高效晶硅电池的发展意义重大。More than 80% of the photovohaic （PV） power generation market share have been occupied by crystalline silicon solar cell, the trend of PV power generation is dominated by the technological process of crystalline silicon solar cell. The light-induced degradation （LID） increases with the increase of photoelectric conversion efficiency of crystalline silicon solar cell, Which become the bottleneck of the development of high efficiency solar cell. Studies have found that the impurity compensation degree and B-O complexs can cause the LID of solar cell. Replacement of boron with gallium and strictly control of the compensation degree can effectively suppress the LID, the study of its mechanism and process has a great significance to the high efficiency solar cell.

关 键 词：太阳电池 光衰减 单晶硅 掺杂 

分 类 号：TB321[一般工业技术—材料科学与工程]