非易失性D-A型高分子信息存储功能材料的研究进展  

Advances in Donor-Acceptor Polymeric Materials for Non-volatile Memories

作　　者：张斌[1] 陈彧[1] 汪诚[1] 庄小东[1] 汪露馨[1] 樊菲 

机构地区：[1]华东理工大学化学与分子工程学院,教育部结构可控先进功能材料及其制备重点实验室,上海200237

出　　处：《功能高分子学报》2013年第4期325-347,共23页Journal of Functional Polymers

基　　金：国家自然科学基金(21074034;51333002);教育部博士点基金(20120074110004)

摘　　要：随着电子工业的迅猛发展,诸如个人电脑、手机、数码相机和媒体播放器等信息技术设备已成为人们日常生活中不可缺少的一部分。无论从技术角度还是从经济角度来考虑,对新型信息存储材料和器件的研发已成为电子行业急需解决的问题。由于聚合物的电子性质可以通过分子设计和合成等手段调控或剪裁,2005年国际半导体技术发展蓝图(ITRS)将聚合物存储器视为新型存储器件。与硅存储器相比,基于高分子存储材料制作的存储器具有材料结构多样、成本低、易加工、柔韧性好、可大面积制作(可通过旋涂或喷墨打印,在塑料、玻璃、互补金属氧化物半导体(CMOS)混合集成电路上面进行加工)、响应快、功耗低、高密度存储等优点,在信息存储以及高速计算领域有着非常广泛的应用前景。本文综述了高分子阻变存储器的基本概念和工作机制及近年来具有推-拉电子结构特征的高分子信息存储材料的设计、合成和器件性能的研究进展,以及存在的亟待解决的问题和未来的发展方向。With the rapid development of electronic industries in recent years, information technology devices, such as personal computer, mobile phones, digital cameras and media players, have become an essential part of our daily life. From both the technological and economic point of view, the development of novel information storage materials and devices has become an emergent issue facing the electronics industry. Due to the possibility of tailoring electronic properties via molecular design and synthesis, polymer electronic memory has been identified as an emerging memory technology since 2005 by the International Technology Roadmap for Semiconductors （ITRS）. In comparison to inorganic materials-based memory devices, polymer memories are proposed to revolutionize electrical applications by providing extremely inexpensive, lightweight, and transparent modules that can be fabricated onto plastic, glass, or the top layer of CMOS hybrid integration circuits. The basic concept and the memory mechanism of resistive polymer memory, the progress of resistive polymer memory materials and the problems that needs to be solved urgently in the near future were systematically reviewed.

关 键 词：高分子信息存储材料 D—A型高分子 非易失性存储 存储器件 

分 类 号：O69[理学—化学] TQ31[化学工程—高聚物工业]