隧穿注入量子点体系的载流子动力学研究  

Study on Carrier Dynamic in Tunneling Injection Quantum Dots System

作　　者：郭静[1] 贾国治[2] 韦方兴 李强[2] 侯苏轩 

机构地区：[1]天津城建大学材料科学与工程学院,天津300384 [2]天津城建大学理学院,天津300384

出　　处：《天津城市建设学院学报》2013年第4期299-302,共4页Journal of Tianjin Institute of Urban Construction

基　　金：国家自然科学基金(11147024;11247025)

摘　　要：通过考虑载流子在量子点中的隧穿、弛豫、热逃逸和非辐射复合等主要输运过程,并建立速率方程模型,研究了隧穿注入量子点体系的载流子动力学过程,探讨了隧穿注入量子点发射光谱对温度和隧穿几率的依赖性.理论分析表明:共振隧穿结构对量子点尺寸色散导致的激光展宽具有一定的抑制作用.By considering the main transport processes of carriers in the quantum dots, such as tunneling, relaxation, thermal escape and nonradiative recombination, the authors of this paper present a steady-state rate equation model to describe the temperature and tunneling probability dependence of photoluminescence characteristics in tunneling injection quantum dot system. The tunneling injection quantum dot emission spectral dependence on temperature and the tunneling probability was discussed in detail. The theoretical analysis shows that resonant tunneling structure has some inhibitory effect on the broad- ened laser caused by the dispersion of the size of quantum dots.

关 键 词：量子点 共振隧穿 速率方程 载流子动力学 

分 类 号：O431.2[机械工程—光学工程]