跳频频率综合器片内带隙基准电压源设计  

Design of Bandgap Voltage Reference in Frequency Hopping Synthesize

作　　者：石会[1] 徐勇[1] 孙峥[1] 林莹[1] 黄颖[1] 

机构地区：[1]解放军理工大学通信工程学院,江苏南京210007

出　　处：《军事通信技术》2013年第4期75-77,共3页Journal of Military Communications Technology

摘　　要：针对跳频电台频率综合器中电源高精度的要求而设计了一款低温度系数、低电源电压的带隙基准电压源电路。采用TSMC 0.18μm射频CMOS工艺条件,利用Candence仿真工具对该电路图进行仿真,版图参与TSMC 0.18μm CMOS工艺的MPW多项目晶圆流片,在室温27℃和电源电压为1.8 V的测试条件下,带隙基准电压源输出电压温度系数仅为3.6×10-6 V/℃,即所设计的带隙基准电压源完全能满足高精度低电源电压系统中正常工作的要求。According to the requirement of high precision power supply in the frequency-hopping synthesizer of the frequency-hopping radio, a low temperature coefficient, low voltage of the Bandgap Voltage Reference（BVR） circuit was especially designed. The circuit was simulated using Candence simulation tool with the TSMC 0. 18 tzm RF CMOS technology. The layout is in the process of Multi-Project Wafer（MPW） tape-out with TSMC 0. 18 btm CMOS technology. Under the test conditions of 27℃ and the power supply voltage of 1.8 V, the temperature coefficient of the output voltage of the BVR is only 3.6 〉（ 10-6 V/℃, namely the designed BVR can completely meet the normal work requirements of the high precision and low power voltage system.

关 键 词：跳频技术 频率综合器 带隙基准电压源 

分 类 号：TN432[电子电信—微电子学与固体电子学]