脉冲激光烧蚀单晶硅羽辉中粒子荷电特性  

Charging properties of particles in plume generated by pulsed laser ablation of single silicon

作　　者：邓泽超[1] 胡自强[1] 丁学成[1] 褚立志[1] 王英龙[1] 

机构地区：[1]河北省光电信息材料重点实验室河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2013年第6期583-586,共4页Journal of Hebei University(Natural Science Edition)

基　　金：国家重点基础研究发展计划前期专项基金资助项目(2011CB612305);河北省自然科学基金资助项目(E2011201134;E2012201035);河北省高等学校科学研究资助项目(Q2012084)

摘　　要：在室温和真空环境中,引入外加直流电场,通过脉冲激光烧蚀单晶硅靶,在与电极板和羽辉轴线平行放置的衬底上沉积了一系列薄膜.扫描电子显微镜(SEM)、拉曼(Raman)散射谱和X线衍射(XRD)谱检测结果均表明,随着电压和衬底位置的变化,均无纳米晶粒形成.结合晶粒成核生长动力学,分析得出烧蚀羽辉中只包含硅原子、带正电硅离子和带负电的电子.Thin films were prepared by pulsed laser ablation of single crystal silicon target under differ- ent voltages in vacuum at room temperature.During the process of deposition,substrates were placed par- allel to electrode board and plume axis.Samples were analyzed by scanning electron microscope（SEM）, Raman scattering spectra and X-ray diffraction（XRD）spectra respectively.The results indicated that no grains formed with the change of voltage and position of substrates.It concluded that the plume contains Si atoms,Si irons with positive charge and electrons combining dynamics of nucleation and growth of Si grains.

关 键 词：脉冲激光烧蚀 电场 成核生长动力学 

分 类 号：O484.1[理学—固体物理]